?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com fgh20n60ufd rev. c0 fgh20n60ufd 600 v, 20 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c40 a collector current @ t c = 100 o c20 a i cm (1) pulsed collector current @ t c = 25 o c 60 a i f diode forward current @ t c = 25 o c20 a diode forward current @ t c = 100 o c10 a i fm (1) pulsed diode maximum forward current 60 a p d maximum power dissipation @ t c = 25 o c165 w maximum power dissipation @ t c = 100 o c66 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c g e c e c g collector (flange) fgh20n60ufd 600 v, 20 a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) =1.8 v @ i c = 20 a ? high input impedance ? fast switching ?rohs compliant applications ? solar inverter, ups, welder, pfc general description using novel field stop igbt technology, fairchild ? ?s field stop igbts offer the optimum performance for solar inverter, ups, welder and pfc applications where low conduction and switch- ing losses are essential.
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com fgh20n60ufd rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box fgh20n60ufd fgh20n60ufdtu to-247 tube 30ea - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 4.0 5.0 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -1.82.4v i c = 20a , v ge = 15v, t c = 125 o c -2.0- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 940 - pf c oes output capacitance - 110 - pf c res reverse transfer capacitance - 40 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -13- ns t r rise time - 17 - ns t d(off) turn-off delay time - 87 - ns t f fall time - 32 64 ns e on turn-on switching loss - 0.38 - mj e off turn-off switching loss - 0.26 - mj e ts total switching loss - 0.64 - mj t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 o c -13- ns t r rise time - 16 - ns t d(off) turn-off delay time - 92 - ns t f fall time - 63 - ns e on turn-on switching loss - 0.41 - mj e off turn-off switching loss - 0.36 - mj e ts total switching loss - 0.77 - mj q g total gate charge v ce = 400v, i c = 20a, v ge = 15v -63-nc q ge gate to emitter charge - 7 - nc q gc gate to collector charge - 32 - nc
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com fgh20n60ufd rev. c0 thermal characteristics electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.76 o c / w r ? jc (diode) thermal resistance, junction to case - 2.51 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 10a t c = 25 o c- 1.9 2.5 v t c = 125 o c- 1.7 - t rr diode reverse recovery time i es =10a, di es /dt = 200a/ ? s t c = 25 o c- 34 - ns t c = 125 o c- 57 - q rr diode reverse recovery charge t c = 25 o c- 41 - nc t c = 125 o c- 96 -
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com fgh20n60ufd rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.01.53.04.56.0 0 20 40 60 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.01.53.04.56.0 0 20 40 60 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 20 40 60 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 4681012 0 20 40 60 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 0.8 1.2 1.6 2.0 2.4 2.8 3.2 40a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 0 4 8 121620 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com fgh20n60ufd rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resi stance 0 4 8 121620 0 4 8 12 16 20 40a i c = 10a 2 0a common emitter t c = 125 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 4 8 121620 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 500 1000 1500 2000 2500 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 020406080 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 102030405060 5 10 100 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms 10 ms dc 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com fgh20n60ufd rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure17. switching loss vs. figure18. turn off switching collector current soa characteristics 0 102030405060 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 0 10203040 3 10 100 200 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 0 10203040 10 100 300 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 102030405060 0.1 1 3 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 10203040 0.02 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a]
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com fgh20n60ufd rev. c0 typical performance characteristics figure 19. forward characteristics figure 20. reverse current figure 21. stored charge figure 22. reverse recovery time figure 23.transient thermal impedance of igbt 0 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 100 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ ? a] reverse voltage, v r [v] 01234 0.1 1 10 40 t j = 75 o c t j = 25 o c t c = 25 o c t c = 75 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 0 5 10 15 20 0.01 0.02 0.03 0.04 0.05 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forward current, i f [a] 0 5 10 15 20 10 20 30 40 50 60 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 0.2 0.5 0.1 0.05 0.01 0.02 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c t 1 p dm t 2
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 8 www.fairchildsemi.com fgh20n60ufd rev. c0 mechanical dimensions to-247a03
fgh20n60ufd 600 v, 20 a field stop igbt ?2008 fairchild semiconductor corporation 9 www.fairchildsemi.com fgh20n60ufd rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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